Growth of a-Si : H Film Using Glow-Discharge Method

Abstract

This report reviews recent developments in the investigation of the Glow-Discharge (GD) decomposition of silane (SiH₄) and the growth kinetics of resulting hydrogenated amorphous silicon (a-Si : H) films. First, several advantages of GD method for a-Si : H deposition are pointed out, through which the importance of gas-phase chemical reactions as well as chemical processes on the growing surface is emphasized. Second, novel plasma diagnostic techniques are described such as optical emission spectroscopy (OES), ion mass spectrometry (MS) and coherent anti-Stokes Raman Spectroscopy (CARS). Finally, on the basis of the experimental data on Si₂H₆ as well as SiH₄ plasma obtained by the above diagnostic techniques, detailed reaction kinetics in both plasmas are discussed, leading us towards a better understanding of the deposition mechanism of a-Si : H films.