抄録
Step kinetic coefficient of GaP/GaP(111)B surface in liquid phase epitaxy growth was estimated by an in situ observation technique using a near-infrared microscopic interferometer under a reduced convection condition by utilizing a strong static magnetic field. Morphological stability of solid/liquid interface during the growth was evaluated based on a linear perturbational approach taking account of the step kinetic coefficient. The estimated value of the macrostep wavelength agreed well with the measured one.
