Abstract
The MOCVD technique is one of the most excellent process for the growth of III-V semiconductor epilayers. In this process, epilayer quality(i.e. thickness uniformity) is determined largely by gas-flow dynamics in the reactor.An understanding of gas-flow patterns in the reactor is necessary to obtain the good uniformity of epilayer on a large scale.
In this study, we developed a new method of generating micron sized TiO 2 particles by the 2-step reaction of TiCl 4.Using this technique, TiO 2 particles are generated very smooth and thick.We visualized by the scattering of a laser light sheet in a vertical reactorr with top inlet, and could observe stable gas-flow patterns for more than 30 minutes.
The experimental results indicate that the fine gas-flow patterns on the 2-inch diameter substrate affects the thickness uniformity strongly.
