分子線エピタキシャル成長InGaAsSbN量子井戸ダイオードの発光特性

抄録

InGaAsSbN quantum well diodes on GaAs substrates and InP substrates were grown by molecular beam epitaxy (MBE) and their electroluminescence properties were studied. It was found that a marked carrier localization effect was observed at low temperature for the InGaAsSbN quantum well diodes on GaAs, while not for the diode on InP. This might be related to the high In composition in the latter structure.