抄録
Approximately 100-nm-thick transparent conducting AZO (ZnO doped with 1.5 wt.% Al2O3) films have been deposited on glass substrates using a pulsed laser deposition method with an ArF excimer laser (λ = 193 nm) and a Nd:YAG laser (λ = 266, 355, 532 nm). In all experiments, a repetition rate of 10 Hz, an energy density of 2 J/cm2, and an irradiation time of 10-60 min (6000-36000 shots) were used. XRD and FE-TEM observations revealed the fact that there is a remarkable difference of the crystal structures in the films fabricated with various wavelengths of the lasers: at 532 nm, it was found that the whole structure was melted.
