Abstract
Atomic N+ ions with 3 keV translational kinetic energy, which were mass separated by using a Wien filter, were irradiated at SiO2/Si(001) surfaces. By applying high energy resolution photoemission spectroscopy with synchrotron radiation, it was found that the SiO2 overlayer (1.6 nm∼2.8 nm) and the interface were effectively nitrided even at room temperature as well as the Si(001) substrate. N-1s photoemission spectra for the nitrided SiO2/Si(001) were deconvoluted into four component peaks. They were assigned to (a) N(-Si)3, (b) N(-SiO)3, (c) (H-)2N-Si, and (d) O-N(-Si)2, respectively.
