速報
N+ ビーム照射で形成したSi酸窒化膜における窒素化学結合状態の放射光X線光電子分光測定
2005 年 48 巻 5 号 p. 343-345
詳細
2005 年 48 巻 5 号 p. 343-345
Atomic N+ ions with 3 keV translational kinetic energy, which were mass separated by using a Wien filter, were irradiated at SiO2/Si(001) surfaces. By applying high energy resolution photoemission spectroscopy with synchrotron radiation, it was found that the SiO2 overlayer (1.6 nm∼2.8 nm) and the interface were effectively nitrided even at room temperature as well as the Si(001) substrate. N-1s photoemission spectra for the nitrided SiO2/Si(001) were deconvoluted into four component peaks. They were assigned to (a) N(-Si)3, (b) N(-SiO)3, (c) (H-)2N-Si, and (d) O-N(-Si)2, respectively.
