抄録
Approximately 200-nm-thick 1.5 wt.% Al-doped zinc oxide (AZO: 1.5 wt.% Al2O3) films have been deposited on glass substrates at 100°C by pulsed laser deposition (PLD) using the fourth harmonic generation (FHG) of Nd: YAG laser (λ=266 nm). In order to reduce resistivity of as-deposited films, annealing process was carried out by ArF excimer laser with laser energy density of 34 mJ/cm2. As a result, the value of resistivity was not almost improved: 1.54×10-3 Ω•cm (for as-deposited) and 1.33×10-3 Ω•cm (for annealed). On the other hand, for the films annealed by fourth harmonic generation of Nd:YAG laser with laser energy density of 20 mJ/cm2, the value of resistivity was reduced from 1.36×10-3 Ω•cm to 8.34×10-4 Ω•cm.
