真空
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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パルスレーザー堆積法による Ga-Zn-O 系透明導電膜の成膜温度の低温化
安倉 秀明上原 賢二高橋 謙太郎鈴木 晶雄青木 孝憲松下 辰彦奥田 昌宏
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2006 年 49 巻 6 号 p. 377-379

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  Approximately 250-nm-thick Ga-doped zinc oxide (GZO: 3 wt.% Ga2O3) films have been prepared on glass substrates at room temperature by pulsed laser deposition (PLD) using ArF excimer laser. During the deposition process, oxygen with partial pressure of 0-1.0 Pa was introduced in the chamber. The film fabrication was carried out under condition of laser energy density with 0.6 to 2 J/cm2. The lowest resistivity of 3.34×10-4 Ω•cm was obtained under optimized condition of laser energy density of 1 J/cm2 with oxygen partial pressure of 1.0 Pa. For the GZO films fabricated with laser energy density of 1 and 2 J/cm2, the values of surface roughness Ra obtained by AFM observation were 2.93 and 3.14 nm, respectively.
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© 2006 日本真空協会
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