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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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フリーマン型イオン源におけるメチルシランのフラグメントイオンとタングステンワイヤ表面状態
藤 章至吉村 智杉本 敏司木内 正人浜口 智志
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2006 年 49 巻 6 号 p. 383-385

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  Ion fragmentation of methylsilane by a hot tungsten wire in a Freeman-type ion source was investigated with low-energy mass separated ion beam apparatus for the study of catalytic chemical vapor deposition (Cat-CVD) processes. The mass analysis showed that dominant fragment ions were typically H1+, H2+, H3+, CH3+, SiH+, and SiCH4+. The ion production rates, which depended strongly on the tungsten wire temperature, decreased with time due to modification of the tungsten wire surface during the process. The x-ray diffraction and x-ray photoelectron spectroscopic measurements showed that silicon carbide, carbon, and tungsten carbide compounds were formed on the tungsten wire surface during the process.

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© 2006 日本真空協会
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