抄録
We studied N condensation behaviors in crystalline Si. N atoms introduced rapidly on Si(100) generate SiN agglomerated structures. We found that this agglomeration is induced by charge transfer between Si and N atoms, which is much stronger than those of silicon oxidation. N atoms introduced slowly on Si(100), however, stay at around the third layer from the topmost surface, leading likely to a stable Si-N network layer at around the same layer. This layer can be a seed layer for layer-by-layer Si3N4 growth on Si(100) along the vertical direction to the surface. Agglomeration and uniform growth of Si3N4 growth have been clearly observed by experimental techniques.
