Fabrication of High TCR TaAl-N Thin Film by Reactive Sputtering Method

Abstract

  The electric characteristics of TaAl-N thin film were investigated. The resistivity of the TaAl-N thin films, having been prepared by DC reactive sputtering of Ta and Al (8:2 area ratio) target in a gas mixture of argon and nitrogen, showed pressure-ratio dependence of nitrogen (P_N2/P_total). The condition of high P_N2/P_total was effective for fabricating the films, having a high TCR (the temperature coefficient of the resistivity). As a result, in the condition of P_N2/P_total=75%, the TCR values were (-)35000 ppm/°C (at 100°C) and (-)25000 ppm/°C (at 200°C, resistivity).