Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization

Abstract

  The crystallinity of polycrystalline Si (poly-Si) film produced by the combined method of solid phase crystallization (SPC) followed by excimer laser annealing (ELA) or ELA followed by SPC is examined by observing the internal stress and the crystal defect. Tensile stress relaxation occurred when SPC was performed before or after ELA. The defect densities of poly-Si films recrystallized by ELA, ELA followed by SPC, and SPC followed by ELA decrease in this order.