Abstract
The sputtering yield, especially as a function of ion incident angle, has been investigated experimentally and theoretically.
The sputtering yields are obtained by measuring the decrease of material weight after ion bombardment. The experiments are carried out by sputtering silicon (111), silicon (100) and copper surfaces with 1 keV argon ions from Kaufman type ion source.
Trajectories of incident ions which are scattered with target atoms are calculated by Monte Carlo simulation based on the LSS theory.
The dependence of the ion incident angle on the sputtering yield can be explained as the competition between the effects of sputtering and backscattering.
