Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 18, Issue 11
Displaying 1-5 of 5 articles from this issue
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  • Preparation of Titanium Oxide and Nitride Films by Means of Reactive Sputtering
    Tetsuya ABE, Toshiro YAMASHINA
    1975 Volume 18 Issue 11 Pages 375-383
    Published: November 20, 1975
    Released on J-STAGE: October 14, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.375
    JOURNAL FREE ACCESS
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    Titanium oxide and nitride films containing various amount of oxygen and nitrogen have been prepared by means of reactive sputtering method. Changing the partial pressure of oxygen and nitrogen from 5 × 10-7 to 5 × 10-3 Torr in argon gas (total pressure was maintained at 5× 10-3Torr), the deposition rate, electrical resistivity, structure and chemical composition of sputtered films have been observed.
    When the partial pressures of oxygen and nitrogen in the sputtered gas were increased, the deposition rate of films began to decrease drastically at the specific partial pressures. In particular, two limiting pressures at which the deposition rates changed drastically were observed to exist in the case of titanium-nitrogen sputtering system.The electrical resistivity of the films also began to change rapidly at the same limiting pressures. In the X-ray diffraction analysis, it was found that TiO and TiN appeared suddenly in the sputtered films at the specific pressures of reactive gases.
    The ultimate analysis of the sputtered films also have been made by means of the sputter-etching technique and Auger electron spectroscopy.
    On the basis of the experimental data, discussion was made on the deposition rate of the films by applying our theoretical model.
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  • Sputtering Yield on Ion Beam Sputtering Method
    Sumio HOSAKA, Ichiro KANOMATA, Seiya HASHIMOTO
    1975 Volume 18 Issue 11 Pages 384-391
    Published: November 20, 1975
    Released on J-STAGE: October 14, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.384
    JOURNAL FREE ACCESS
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    The sputtering yield, especially as a function of ion incident angle, has been investigated experimentally and theoretically.
    The sputtering yields are obtained by measuring the decrease of material weight after ion bombardment. The experiments are carried out by sputtering silicon (111), silicon (100) and copper surfaces with 1 keV argon ions from Kaufman type ion source.
    Trajectories of incident ions which are scattered with target atoms are calculated by Monte Carlo simulation based on the LSS theory.
    The dependence of the ion incident angle on the sputtering yield can be explained as the competition between the effects of sputtering and backscattering.
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  • ESCA Study of Surface Contamination Produced by Ion Implantation
    Masafumi YAMAGUCHI
    1975 Volume 18 Issue 11 Pages 392-400
    Published: November 20, 1975
    Released on J-STAGE: October 14, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.392
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    Surface contamination of silicon produced by ion implantation is examined by ESCA and IMA, and following results are disclosed. The contaminant film thickness can be evaluated by using ESCA. Deposition rate of the film increases with increase of ion current density and partial pressure of hydrocarbons in the vacuum system, and decrease of ion energy and substrate temperature. The contaminant film is very tenacious. Heat treatment in air can remove the film, but heat treatment in vacuum cannot. Surface contamination produced by ion implantation is formed by polymerization of hydrocarbon molecules, mainly originated from diffusion pump oil, caused by high energy ion bombardment.
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  • An In-line Evaporation System for Optical Thin Film Production
    Sanpei ESAKI
    1975 Volume 18 Issue 11 Pages 401-404
    Published: November 20, 1975
    Released on J-STAGE: October 14, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.401
    JOURNAL FREE ACCESS
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  • The Ion Current Characteristics of Cathode Circuit in a rf Ion Plating System
    Tsutomu TSUKADA, Naokichi HOSOKAWA
    1975 Volume 18 Issue 11 Pages 405-408
    Published: November 20, 1975
    Released on J-STAGE: October 14, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.405
    JOURNAL FREE ACCESS
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    [in Japanese]
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