Abstract
The fine stripe pattern of Si is formed by RF sputter etching. Both the line width and spacing are varied from 1 to 10μm, and the depth is about 1 μm. The cross sectional view of the samples etched under various sputter conditions is observed by scanning electron microscope. Under some selected conditions, the narrower the spacing, the lower is the etch rate. These phenomena seem to be due to the redeposition of sputtered material, Cr and Si in our cases.
