Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 20, Issue 2
Displaying 1-3 of 3 articles from this issue
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  • The Reliability Engineering in the Vacuum Industry
    Yoshiyasu MORISADA
    1977 Volume 20 Issue 2 Pages 57-59
    Published: February 20, 1977
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.20.57
    JOURNAL FREE ACCESS
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  • Preparation of PLZT Thin Films by RF Sputtering
    Makoto ISHIDA, Hiroyuki MATSUNAMI, Tetsuro TANAKA
    1977 Volume 20 Issue 2 Pages 60-65
    Published: February 20, 1977
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.20.60
    JOURNAL FREE ACCESS
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    Ferroelectric PLZT thin films were prepared onto Pt and fused quartz substrates by RF sputtering method using powder targets with a few weight % of excess PbO. Structures of films were analyzed by X-ray diffraction and classified into three types depending on substrate temperatures : perovskite type (PLZT), pyrochlore type and the coexistence of both types. For a preparation of PLZT thin films, the substrate temperature was kept above 550 °C. Excess PbO seemed to act as a kind of flux for crystal growth. The Curie temperature and hysteresis loops of thin films were investigated and it was confirmed that ferroelectric PLZT thin films could be obtained without annealing.
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  • Fine Pattern Etching by RF Sputtering
    Yoshifumi KAWAMOTO, Shigeru NISHIMATSU, Kikuji SATOH
    1977 Volume 20 Issue 2 Pages 66-71
    Published: February 20, 1977
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.20.66
    JOURNAL FREE ACCESS
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    The fine stripe pattern of Si is formed by RF sputter etching. Both the line width and spacing are varied from 1 to 10μm, and the depth is about 1 μm. The cross sectional view of the samples etched under various sputter conditions is observed by scanning electron microscope. Under some selected conditions, the narrower the spacing, the lower is the etch rate. These phenomena seem to be due to the redeposition of sputtered material, Cr and Si in our cases.
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