Abstract
Thermally grown oxide layers on the (0001) Si face and the (0001) C face of 6H-SiC have been investigated using Auger electron spectroscopy. Auger depth-profiles have also been obtained with argon ion sputtering. The oxide layers grown at 1000°C for 2 hr are 152 Å in thickness on the Si-face and 908 Å on the C-face by ellipsometry. The Auger analysis shows that the oxide layers on the both faces are silicon dioxide (SiO2). Both oxide layers have similar depth-profiles in the interface region, the width of which is 120-130 Å. In this region, the OKLL peak decreases and the CKLL peak increases in height monotonically toward SiC, while a simultaneous existence of the two SiKLL peaks of the oxide layer and SiC is observed. A much thicker oxide layer on the Si-face formed by longer oxidation shows a very wide interface region.
