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Volume 22, Issue 2
Displaying 1-4 of 4 articles from this issue
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Takeo TSUCHIYA1979 Volume 22 Issue 2 Pages 37-41
Published: February 20, 1979
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDownload PDF (867K) -
Saburo ATAKA, Kiyohisa INAO1979 Volume 22 Issue 2 Pages 42-48
Published: February 20, 1979
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThermal diffusion of impurities (P, Te, Se, Zn) into tin oxide films has been investigated in order to control their electrical properties. The diffusion of the impurities begins at temperatures as low as 300°C. The sheet resistance of the film diffused with phosphorus at 400°C markedly increases to the extent of more than 100 MΩ/square. In case of phosphorus, tellurium and selenium diffusion, the sheet resistances increase along with the diffusion temperatures. But the resistances of tellurium- and selenium-diffused films do not change so largely as that of phosphorus-diffused ones. On the contrary, the resistance of zinc-diffused film has a peak near the diffusion temperature of 300°C. Also the transmittance of the films after the diffusion of phosphorus, tellurium and selenium does not decrease largely expect for that of zinc.
It is concluded that the resistance of tin oxide films can be controlled by thermal diffusion of impurities.View full abstractDownload PDF (821K) -
Akira SUZUKI, Hiroyuki MATSUNAMI, Tetsuro TANAKA1979 Volume 22 Issue 2 Pages 49-55
Published: February 20, 1979
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThermally grown oxide layers on the (0001) Si face and the (0001) C face of 6H-SiC have been investigated using Auger electron spectroscopy. Auger depth-profiles have also been obtained with argon ion sputtering. The oxide layers grown at 1000°C for 2 hr are 152 Å in thickness on the Si-face and 908 Å on the C-face by ellipsometry. The Auger analysis shows that the oxide layers on the both faces are silicon dioxide (SiO2). Both oxide layers have similar depth-profiles in the interface region, the width of which is 120-130 Å. In this region, the OKLL peak decreases and the CKLL peak increases in height monotonically toward SiC, while a simultaneous existence of the two SiKLL peaks of the oxide layer and SiC is observed. A much thicker oxide layer on the Si-face formed by longer oxidation shows a very wide interface region.View full abstractDownload PDF (873K) -
Tetsuya ABE, Takaei SASAKI, Toshiro YAMASHINA1979 Volume 22 Issue 2 Pages 56-62
Published: February 20, 1979
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe effects of hydrogen partial pressure and a sputtering gas (argon or helium) on the deposition rate and film properties such as electrical resistivity, crystal structure and hydrogen contents have been investigated in the hydrogen partial pressure range from 8×10-5 Torr (1.1 × 10-2 Pa) to 1 × 10-2 Torr (1.3 Pa) : the total pressure containing hydrogen and either argon or helium was maintained at 5 × 10-3 Torr (6.5 × 10-1 Pa) or at 1 × 10-2 Torr (1.3 Pa), respectively.
As hydrogen partial pressure was increased, the deposition rate of films began to decrease drastically at the specific partial pressures in the both sputtering gases.
X-ray diffraction analyses revealed that the crystal structure of deposited films changed from identified structures to unidentified ones at above 5 × 10-3 Torr (6.5 × 10-1 Pa) and over the all examined hydrogen pressures for argon and helium sputtering gases, respectively.
The hydrogen contents of deposited films, which were determined by means of thermal desorption method, increased with increasing hydrogen partial pressure for both sputtering gases.
On the bases of the experimental data, discussions were made on the mechanism of film formation during the reactive sputtering.View full abstractDownload PDF (748K)
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