Analysis of the Composition in a-Si_1-xGe_x Alloy Films

Abstract

Simple and reasonably accurate methods for determining the composition in a-Si_1-xGe_x films have been proposed. The first one uses the X-ray fluorescence intensity of Ge-Kα line and the weight of the film. The second one uses the X-ray fluorescence intensities of both Ge-Kα line and Si-Kα line. The third one utilizes the signal intensities of Ge and Si ions in ion-micro analysis (IMA). In the latter two methods, a series of a-Si_1-xGe_x films of which compositions have been determined by the first method are used as a standard. Advantages and disadvantages of these methods have been described.
The compositions of a-Si_1-xGe_x films prepared by the glow-discharge technique have been determined by the third method. The results agree quite well with the values which are estimated based on the deposition rate.