抄録
For etching, the ion beam produced by silane gas discharge is irradiated on the Si substrate.
In vertical incidence of the ion beam on Si, the film is deposited up to 3 kV which is the maximum acceleration voltage in the apparatus. By changing the angle of beam incidence θ, ethcing is possible. The maximum etching rate is 6.8 Å/min at the beam intensity of 20 μA/cm2, the acceleration voltage of 1 kV and θ ≈ 65°. The value is 1.4 times larger than the maximum etching rate in the use of Ar ion beam at the same beam intensity and acceleration voltage. At θ=65 °, Si is etched at the acceleration voltage above about 500 V.
