MBEによる光デバイスの開発

抄録

Growth conditions of Al_xGa_1-xAs layers for optical devices were investigated to find the optimum condition using a production-type MBE. It was found that the substrate temperature was the most important factor. Ridge wave guide stripe lasers fabricated from MBE DH wafers grown at about 680°C have good c w threshold currents (λ=773 nm, I_th=50 mA). Visible LEDs (λ=665 nm) were also fabricated from MBE DH wafers.