対向陰極型直流マグネトロン放電プラズマCVD装置
1984 年 27 巻 7 号 p. 581-588
詳細
1984 年 27 巻 7 号 p. 581-588
A new type of DC magnetron-discharge CVD apparatus with facing-cathodes structure has been developed. The radiation damage by high-energy chaged particles, which is often encountered in a plasma process, can be reduced using the new plasma CVD. Discharge characteristics of the apparatus have been examined and hydrogenated amorphous silicon films have been deposited using the new apparatus. It is shown that, when the deposition rate is less than 50Å/min, the photo-conductivity of a-Si films can be about 3 times as large as that of films prepared by a conventional plasma CVD, probably due to the effect of reduced radiation damage.
