真空
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
アモルファスWO3薄膜のイオンビームレジスト効果
越田 信義富田 修
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1984 年 27 巻 7 号 p. 596-599

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Ion irradiation effect on amorphous WO3 (a-WO3) films was studied using thermionic Na+ ions with accelerating voltages V=412 kV. These films become insoluble in alkaline solution at values of ion dose beyond a threshold Dth. Exposure characteristics show that the contrast is considerably higher than that of conventional organic polymer electron-beam resists. The threshold dose, which was almost independent of the film thickness, increased gradually with increasing accelerating voltage of ions (DthV2/3). These results were compared with exposure characteristics for electron irradiation reported in the literature. A-WO3 films are potentially useful as inorganic ion-beam resists.

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