抄録
Ga doped ZnSe films were prepared on fused quartz, 7059 glass and Cr doped (100) GaAs by means of an ion beam deposition technique. ZnSe films grown on fused quartz and 7059 glass were a polycrystal with a preferential <111> orientation. Single crystalline ZnSe grew epitaxially on (100) GaAs. The resistivities of the ZnSe films varied with the amount of Ga doped during the film growth. The ZnSe films grown on fused quartz and 7059 glass had the resistivities ranging between 2×106 and 2×1010 Ω ·cm. Also, the resistivities of the ZnSe films grown on (100) GaAs were 4×1022×105 Ω ·cm.
