Abstract
A low-temperature-growth technique for GaN single crystal films has been developed using electron cyclotron resonance (ECR) plasma excitation. GaN films were grown on sapphire substrates utilizing reaction of trimethylgallium (TMGa) with highly activated nitrogen produced by ECR excitation of ammonia. Growth conditions to obtain single crystals were studied. Single crystal growth of Zn-doped films can be obtained. Zn-doped films exhibit a luminescence band peaking at 430550 nm. Surface morphologies of both undoped and Zn-doped films are very smooth.
