Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 30, Issue 3
Displaying 1-3 of 3 articles from this issue
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  • Microdischarges on a High-Voltage Electron Gun Under High Vacuum
    Nagamitsu YOSHIMURA, Hisao WATANABE, Shoji KATOH, Nobuyuki KOBAYASHI
    1987 Volume 30 Issue 3 Pages 105-115
    Published: March 20, 1987
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.30.105
    JOURNAL FREE ACCESS
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  • Low Temperature Growth of GaN Single Crystal Films Using ECR Plasma Excited Metalorganic Vapor Phase Epitaxy
    Toru SASAKI, Sakae ZEMBUTSU
    1987 Volume 30 Issue 3 Pages 116-122
    Published: March 20, 1987
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.30.116
    JOURNAL FREE ACCESS
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    A low-temperature-growth technique for GaN single crystal films has been developed using electron cyclotron resonance (ECR) plasma excitation. GaN films were grown on sapphire substrates utilizing reaction of trimethylgallium (TMGa) with highly activated nitrogen produced by ECR excitation of ammonia. Growth conditions to obtain single crystals were studied. Single crystal growth of Zn-doped films can be obtained. Zn-doped films exhibit a luminescence band peaking at 430550 nm. Surface morphologies of both undoped and Zn-doped films are very smooth.
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  • Properties of Silicon Nitride Films Deposited by ECR Plasma CVD
    Minoru SAWADA, Daijiro INOUE, Yasoo HARADA
    1987 Volume 30 Issue 3 Pages 123-129
    Published: March 20, 1987
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.30.123
    JOURNAL FREE ACCESS
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    Correlations between deposition conditions and properties of silicon nitride films deposited by an electron-cyclotron-resonance (ECR) plasma CVD have been investigated. BHF etching rate can be minimized, independent of the microwave power, by the control of the flow ratio (SiH4/N2) and total flow rate (SiH4+N2). The refractive index of the films deposited by these conditions are approximately 2.0. The films deposited at SiH4 (10 sccm) and N2 (10 sccm) have an electric breakdown strength of more than 8 MV/cm, a dielectric constant (1 MHz) of 6.4-6.9, and an internal stress of more than 7 × 109 dyn/cm2.
    The compressive stress, tensile stress and stress-free films can be successfully deposited by controlling the deposition conditions.
    The properties of the annealed films have been also investigated. Internal stress changes little upto an annealing temperature of400°C, but strongly shifts toward the tention above 400°C.
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