Preparation of SiC_x Films by Sputtering of Graphite/SiC Target

Abstract

SiC_x alloy films were prepared by r.f. magnetron sputtering of graphite/SiC target in a pure Ar atmosphere. The films prepared on various deposition parameters, such as position of the substrate, r.f. power, and sputtering pressure were studied using X-ray photoelectron spectroscopy and IR transmission spectroscopy as well as Knoop hardness measurements. Microhardness of the films decreased with decreasing r.f. power, and with increasing sputtering pressure. On the contrary oxgen content of the films increased with decreasing r.f. power, and with increasing sputtering pressure. Based on these results and IR spectra the dependence of the microhardness on Si-C bonds was discussed.