Abstract
Prepavation of TiO2 films was performed using a newly developed ion dynamic mixing apparatus. An ECR bucket-type ion source was used to obtain sufficient oxygen ion current for film synthesis with long-term stable operation. The ion beam energy was varied between 5 to 25 keV and the beam current was fixed at 0.5 mA during film deposition. From XRD and laser Raman spectroscopy of prepared films, it was found that TiO2 films of the rutile type alone were fabricated and high energy ion bombardment resulted in crystallization of the films. RBS data of films deposited on carbon plates indicated that an in-flow of cold O2 gases onto the sample from the ion source greatly affected the stoichiometric film composition.
