Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 35, Issue 1
Displaying 1-4 of 4 articles from this issue
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  • Optogalvanic Spectroscopy
    Shigeyuki SEKINE
    1992 Volume 35 Issue 1 Pages 1-7
    Published: January 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.1
    JOURNAL FREE ACCESS
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  • Formation of Thin Si Oxide Films on n-Type Si (100) Substrates Prepared by Low-Energy Oxygen Ion Bombardment
    Kouichi USAMI, Hiroshi OKABE, Tadayuki KOBAYASHI, Kuniyoshi YOKOO, Tos ...
    1992 Volume 35 Issue 1 Pages 8-14
    Published: January 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.8
    JOURNAL FREE ACCESS
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    Low-energy oxygen ions in the energy range of 60-160 eV were extracted from a single-grid Kaufman-type ion source. A small Al disk was placed in front of a cathode filament of the ion source to suppress metal contamination from filament oxide. Ions were irradiated on n-type Si (100) substrates to form ultrathin Si oxide films of less than 10-nm thickness. Al electrodes were deposited on the insulator films to fabricate M-I-S (metal-insulator-semiconductor) tunnel diode structures, and electrical properties of the diodes, such as I-V characteristics, tunnel resistance and thermal coefficient of diode current, were measured. These results were discussed in relation to the ion beam oxidation conditions, and the applicability of the films to tunnel devices was also studied.
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  • Formation of Titania Films by Ion Dynamic Mixing
    Shoji MIYAKE, Kazuhiko HONDA, Mamoru SATOU
    1992 Volume 35 Issue 1 Pages 15-21
    Published: January 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.15
    JOURNAL FREE ACCESS
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    Prepavation of TiO2 films was performed using a newly developed ion dynamic mixing apparatus. An ECR bucket-type ion source was used to obtain sufficient oxygen ion current for film synthesis with long-term stable operation. The ion beam energy was varied between 5 to 25 keV and the beam current was fixed at 0.5 mA during film deposition. From XRD and laser Raman spectroscopy of prepared films, it was found that TiO2 films of the rutile type alone were fabricated and high energy ion bombardment resulted in crystallization of the films. RBS data of films deposited on carbon plates indicated that an in-flow of cold O2 gases onto the sample from the ion source greatly affected the stoichiometric film composition.
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  • Preparation of a Field Emitter by use of Ar Plasma Etching
    Hiroshi MIMA, Toru INOUE, Tsukasa KURODA, Osamu TUKIDE
    1992 Volume 35 Issue 1 Pages 22-24
    Published: January 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.22
    JOURNAL FREE ACCESS
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