Abstract
As application of radical beams in semiconductor surface treatments have recently increased considerably, new measurement methods for radical beams have been explored. Quantitative measurements of radical beams by means of the NO or NO2 gas titration technique, and the influence of radical lifetimes on the wall recombination coefficient (γ) are described here. The NO2 titration can be applied to determine the concentrations of each excited radical populated in discrete energy levels. In high power oxygen plasma downstreem it is observed that the majour component among the radicals is O (1D) state. For the oxygen radicals, (γ) is found to vary from 10-5 to 10-2 s-1 depending on the material, such as Pyrex, Quartz or Copper.
