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Volume 35, Issue 11
Displaying 1-10 of 10 articles from this issue
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Shun-ichi GONDA1992 Volume 35 Issue 11 Pages 879-886
Published: November 20, 1992
Released on J-STAGE: October 20, 2009
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Isao KUSUNOKI1992 Volume 35 Issue 11 Pages 887-893
Published: November 20, 1992
Released on J-STAGE: October 20, 2009
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Yoshinori HATANAKA, Sunil WICKRAMANAYAKA1992 Volume 35 Issue 11 Pages 894-898
Published: November 20, 1992
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSAs application of radical beams in semiconductor surface treatments have recently increased considerably, new measurement methods for radical beams have been explored. Quantitative measurements of radical beams by means of the NO or NO2 gas titration technique, and the influence of radical lifetimes on the wall recombination coefficient (γ) are described here. The NO2 titration can be applied to determine the concentrations of each excited radical populated in discrete energy levels. In high power oxygen plasma downstreem it is observed that the majour component among the radicals is O (1D) state. For the oxygen radicals, (γ) is found to vary from 10-5 to 10-2 s-1 depending on the material, such as Pyrex, Quartz or Copper.View full abstractDownload PDF (518K) -
Kangsa PAK, Tetsuya SHIMOMURA, Isao SAITOH, Hiroo YONEZU1992 Volume 35 Issue 11 Pages 899-904
Published: November 20, 1992
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThe combination of deposition equipment, such as that using molecular beam epitaxy (MBE), with focused ion beam (FIB) systems makes it possible to realize maskless processing. In the conventional FIB systems, a very small beam radius in the low-energy region is difficult to obtain. Hence it is necessary to form a retarding field between the FIB column and the target. We developed a new low-energy FIB system with an electrically floating intermediate lens system, which can be utilized in the retarding mode as the target with zero bias. Using these systems, experiments on direct and selective Ga deposition were performed in the retarding mode. The incident energy (EL) was varied from 50 to 10 eV. Selective Ga deposition, even for EL as low as 10 eV, was confirmed by Auger electron spectroscopy.
In addition, experiments on maskless selective GaAs deposition were conducted. Ga-ion beams and As4 molecules were supplied simultaneously on a Si substrate at the condition of EL=50 eV and the substrate temperature of 500°C. As a result we succeeded in the selective deposition of GaAs for the first time with a low-energy FIB.View full abstractDownload PDF (769K) -
Takashi FUYUKI, Tatsuo YOSHINOBU, Hiroyuki MATSUNAMI1992 Volume 35 Issue 11 Pages 905-911
Published: November 20, 1992
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSAtomic-layer level control in SiC crystal growth using gas source molecular beam epitaxy was demonstrated. Alternate supply of source gases of Si2H6 and C2H2 induced the transitions of surface superstructures. When Si2H6 was supplied, Si atoms generated by thermal decomposition were adsorbed on a 3C-SiC (001) substrate, which brought about the change of surface superstructures from the initial c (2×2) to the sequential evolution of (2×1), (5×2) and (3×2) corresponding to the increase of constituent Si atoms. When C2H2 was supplied, the adsorbed Si atoms reacted with the C2H2 molecules, resulting in crystallization of SiC, and the superstructure showed the initial c (2×2) pattern. The growth rate seemed to be regulated by the limited number of Si atoms forming superstructures. Detailed analysis of in-situ dynamic RHEED observation revealed the proper configuration of surface superstructures, and the possibility of one-monolayer growth of 3C-SiC was discussedView full abstractDownload PDF (879K) -
Toshiro ISU, Masayuki HATA, Akiyoshi WATANABE, Shigeo GOTO, Yositaka M ...1992 Volume 35 Issue 11 Pages 912-918
Published: November 20, 1992
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSScanning microprobe reflection high-energy electron diffraction (μ-RHEED) reveals microscopic surface features during MBE growth. The Ga droplet formation and annihilation were observed in GaAs growth with alternative source supply. The droplet movement was also observed on a vicinal plane of a GaAs (111) substrate. InAs hillock formation was observed on high temperature substrates, and the real-time observation showed that the hillocks originated in the droplets on the surface. The surface diffusion length of adatoms was estimated from the distribution of growth rates near the edge of a mesa stripe on the substrate. The obtained values of the diffusion length were much longer than the averaged distance between atomic steps on the surface. This means that the incorporation ratio of the adatom into an atomic step is much less than unity.View full abstractDownload PDF (1920K) -
Shunsuke OHKOUCHI, Ichiro TANAKA1992 Volume 35 Issue 11 Pages 919-924
Published: November 20, 1992
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSSurface structures of molecular beam epitaxially (MBE) grown GaAs (001) vicinal surfaces were investigated using a multichamber ultrahigh-vacuum scanning tunneling microscope (UHV-STM) system equipped with an MBE facility. The surface structures were compared after 30 monolayer GaAs growth. In the case of the vicinal surface cut 2° towards the [111] A direction, only A-type steps were observed on the surface. On the other hand, in the case of the vicinal surfaces cut towards [111] B and [010] direction, both A-and B-type steps were observed on the surfaces; that is, wide terraces bordered by B-type steps and narrow terraces bordered by A-type steps coexisted on both surfaces. We performed further MBE growth on these vicinal surfaces. The surface structures evolved to become more uniform, reflecting the misorientations after 1.5μm GaAs growth under the step-flow condition.View full abstractDownload PDF (2023K) -
Kenji HARAFUJI, Akio MISAKA, Masafumi KUBOTA, Noboru NOMURA1992 Volume 35 Issue 11 Pages 925-934
Published: November 20, 1992
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSA new macroscopic surface reaction model, which takes into account the adsorbed particle layer on the substrate, has been developed to calculate topological deformations in dry-etching microfabrication processes. The model is applied to silicon-dioxide trench etching. The following several kinds of reactions are well simulated on the basis of the unified surface reaction model. The first is the phenomenological differences between reaction-rate-limited and transport-limited cases in thermally induced chemical reaction. The second is a vertical profile formation of trench structures. This is based on the balance among chemical reactions, ion-assisted etching and polymer deposition on the side wall of trenches.View full abstractDownload PDF (1673K) -
Masami NAKASONE1992 Volume 35 Issue 11 Pages 935-938
Published: November 20, 1992
Released on J-STAGE: October 20, 2009
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Shigeharu OHASHI1992 Volume 35 Issue 11 Pages 939-942
Published: November 20, 1992
Released on J-STAGE: October 20, 2009
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