Abstract
In the analysis of scanning tunneling microscopy (STM), a one-dimensional model is used to predict the tunneling spectrum of a quantum well structure. Investigations of the current-voltage characteristics for the double potential barrier structure are presented for a heterostructure (GaAs/AlAs/GaAs) -vacuum-STM tip (GaAs) system. The dependences of resonant tunneling current-voltage characteristics on the double-barrier structures are shown for the peak voltage of negative resistance and the shape of negative resistance.
