A systematic study of local electronic structures in alloy semiconductor GaAs
1-xP
x, has been made by using Auger valence electron spectroscopy (AYES). Particular emphasis has been paid to the local valence electronic states of constituent atoms having different local atomic configurations in the alloy lattice. Dependencies of Auger valence electron spectra of Ga [3s, 3d, V], As [3d, V, V] and P [2p, V, V] transitions on the alloy composition were measured and correlated with the local atomic bonding structure of these constituent atoms. Simple tight-binding calculation of Auger valence electron spectra of the constituent elements of GaAs
1-xP
x, alloys has been also performed to analyze the valence electron states of constituent elements on the basis of the local density of states of the constituent elements.
View full abstract