還元反応スパッタリングによる酸化鉄薄膜形成

抄録

Reactive sputtering conditions in which Fe₃O₄ films are deposited from α-Fe₂O₃ targets in an Ar-H₂ atmosphere are described. It is confirmed that increases in the H₂ fraction in the atmosphere, the target temperature or the substrate temperature reduce the degree of oxidation of the deposited iron oxide films, and that an increase in sputtering power density increases the degree of film oxidation. By controlling these parameters, Fe₃O₄ thin films which have specific resistances of 2 × 10^-2-2 ×10^-1 Ω·cm and a saturation magnetization of about 3300 G are obtained. It is also proven that the Fe₃O₄ thin films are converted into γ-Fe₂O₃ thin films by heating them at 330°C for 1 hour in air, and that these thin films have magnetic properties which make them suitable for use as high-density magnetic recording media.