Abstract
ZnO : Al (AZO) films were deposited on glass substrates heated to 450°C by rf magnetron sputtering of a ZnO target containing 2 wt% Al2O3. Resistivity of 7.8×10-4 Ω·cm was obtained in 400-nm-thick AZO films prepared at a sputter argon gas pressure of 1 Pa. Total transmittance of 80% and haze ratio of 58% at a wavelength of 550 nm were obtained in 4000-nm-thick AZO films prepared at a sputter argon gas pressure of 3 Pa, with subsequent postannealing at 450°C for 20 min in N2 atmosphere. The crystallization process of AZO has been investigated by observation with ESEM (environmental scanning electron microscope).
