LiNbO3基板上へのZnOスパッタ薄膜の形成
1999 年 42 巻 3 号 p. 163-166
詳細
1999 年 42 巻 3 号 p. 163-166
ZnO thin films were deposited on several LiNbO3 substrates with specified orientation by a rf-sputtering technique. The films were deposited on the substrates at room temperature or 573 K in various oxygen-argon atmospheres. From X-ray diffraction pattern, ZnO (002) reflection peak was measured for both of x and z cut LiNbO3 substrates. ZnO (002) peak intensity depended on gas flow rate of oxygen to argon and anneal temperature. When the film was deposited on z cut LiNbO3 substrate at 573 K in O2 (20%) + Ar (80%) gas and annealed at 773 K in air, the film showed the crystalline growth highly oriented at [002] direction.
