GaAs/AlxGa1-xAs超格子の反射電子像の解析
2000 年 43 巻 3 号 p. 255-258
詳細
2000 年 43 巻 3 号 p. 255-258
The backscattered electron signals from GaAs/AlxGa1-xAs superlattice structures are studied with the Monte Carlo simulation of electron scattering. The following results have been obtained. The high resolution observation of GaAs/AlxGa1-xAs superlattice structures is achieved by detecting the low-loss backscattered electrons. The minimum detectable mean atomic number variation is 2.7 for 2 nm GaAs/2 nm AlxGa1-xAs superlatice with the low-loss backscattered electron signal. This value agrees with the experimental result.
