Abstract
Lowering process temperature of gate oxide formation process is essential to realize ultra-high integration devices. We have succeeded in substantially reducing a process temperature of silicon oxide film formation on (100) and (111) silicon substrate by Kr/O2 mixed microwave excited high-density plasma which have high-density and low electron temperature. The silicon oxide films exhibit high growth rate, high dielectric strength, charge-to-breakdown and low inter-face trap density enough to thermally grown silicon oxide.
