Abstract
β-FeSi2 thin films were deposited on Si (001) substrate by a pulsed laser deposition using an ArF excimer laser. From XRD peaks of the as-deposited films, peaks of β-FeSi2 (400), (600) and (800) were identified. At this time, it was found from FE-SEM observation that there was aggregation on the film surface. In order to overcome these problems, an annealing process using an ArF excimer laser was carried out. From XRD peaks of the annealed films, intensified peaks of β-FeSi2 (400), (600) and (800) were identified, and improvement of crystallinity was recognized. It was found from FE-SEM observation that the surface of film was smooth.
