抄録
The films of BaTiO3 and (Ba-Sr) TiO3 were prepared with two types of evaporating methods. The several kinds of materials were used as substrates and their temperatures ranged from 200°C to 1200°C. The films were baked at various temperatures in air or O2. The crystallization was investigated by means of x-ray diffraction and electronmicroscope. For the case of platinum substrate, the crystallization was not appreciable for the substrate temperatures and also baking temperature up to 400°C and, thereabove, the crystalline size increased with the rise of temperature. The films, as they were evaporated, had low specific resistance and low dielectric constant and the baking them brought about the increase in these two values. A (Ba0.95 Sr0.05) TiO3 film, thus baked at 1200°C, had dielectric constant about 1500 at room temperature and dielectric anomalies were observed at the temperatures 100, 0, and -80°C
