Low Temperature Growth of Polycrystalline Si Films Using Pulsed-Plasma CVD under Near Atmospheric Pressure

Abstract

  Low-cost fabrication of poly-Si TFT at low temperature is a key for the realization of flexible displays. By using pulsed-plasma CVD under near-atmospheric pressures, we have successfully obtained poly-Si films on polyethylene terephthalate substrates at a low temperature of 150°C. Judging from the dominance of the crystalline peak found in Raman scattering spectra as well as the absence of the incubation layer at the film/substrate interface observed in transmission electron micrographs, it is suggested that the quality of our poly-Si films is quite high. With its cost-effective and low-temperature-grown features, our high quality poly-Si produced in the pulsed-plasma CVD is expected to contribute greatly to the commercialization of flexible displays.