2008 Volume 51 Issue 10 Pages 663-667
Microcrystalline silicon-germanium (μc-SiGe) films were fabricated on glass substrates by the RF reactive magnetron sputtering method using Ar and H2 mixtures. We could reduce the crystallization temperature to 100°C and obtained the photosensitivity in the μc-SiGe films with any Ge content from 0 to 100%. These results indicate that the H2 introduction into the sputtering gases has two important effects to decrease the crystallization temperature of the μc-SiGe films and to improve the film properties by the hydrogen termination of defects.