2008 Volume 51 Issue 3 Pages 158-161
Etching yields of SiO2 by CF3 ion beam injections with or without simultaneous light irradiation have been measured by a low-energy mass-selected ion beam system. A Xe Lamp, an L2D2 lamp, an Ar ICP (inductively coupled plasma) or a VUV (Vacuum Ultraviolet) Lamp was used separately as the light source. The etching yield is the ratio of the number of incident ions to that of removed atoms. The obtained SiO2 etching yields by simultaneous irradiation of CF3 ions and photons from the light source were smaller than those by ion beam irradiation only. This difference in etching yields may be caused by modification of CFx polymer formation on the substrate surface during the beam etching process.
