Abstract
Precise characterization of physical properties in nanometer-scale materials is interesting not only in terms of low-dimensional physics but also in application to devices. Due to the reduced dimensionality and symmetry, these systems possess various interesting properties that cannot be found in the bulk. In this article, focusing on epitaxial ultrathin bismuth films formed on a silicon substrate, we introduce an intriguing interplay of the quantum size and relativistic effects in reciprocal space. Utilizing spin- and angle-resolved photoemission spectroscopy, we observed clear Rashba-split nature of the surface-state bands in these Bi films which is a relativistic effect. However, the band dispersion did not follow the simple Rashba picture and the spin-splitting was lost where they overlapped with the bulk projection. From first-principles calculations, this is explained as a change in the nature of the band- splitting into an even-odd splitting induced by the quantum size effect.
