Abstract
We have developed a technique for depositing a metal compound thin film at a high deposition rate and low temperature. It involves repeatedly alternating between forming a very thin metal film by DC magnetron sputtering and converting the film into a very thin film of a metal compound by irradiating it with a radio-frequency plasma of an activated gas. We succeeded in preparing a WO3 reduction coloring thin film with electrochromic properties at a high deposition rate (equivalent to that of tungsten metal) and a low substrate temperature (100°C or less). We then evaluated the possibility of forming a WO3 reduction thin film with electrochromic properties using this technique by the CV method, with a spectrophotometer. We confirmed the effectiveness of this method by measuring the amount of transferred charge and the optical density change (ΔOD).
