Abstract
The formation of extended defects in 4H-SiC epilayers has been surveyed. Generation, conversion and propagation of the extended defects, which are basal plane dislocations, threading dislocations, basal plane Frank-type defects, carrot defects and polytype inclusions, in 4H-SiC epitaxial growth are tracked by performing topography before and after the growth procedure. We also have made collation between the detailed feature of topography contrast and the microscopic structure for the extended defects in a combination of X-ray topography, transmission electron microscopy and KOH defect selective etching analysis, and the formation mechanism of each type of defects is discussed.
