2014 Volume 57 Issue 12 Pages 451-456
High-mobility graphene is fabricated on hexagonal boron nitride (h-BN) using a micromechanical cleavage and dry transfer technique. We demonstrate the photovoltaic effect due to the cyclotron resonance in graphene/h-BN under quantized Hall regime and the electrical spin injection into graphene through a single-layer h-BN tunnel barrier.