Journal of the Vacuum Society of Japan
Online ISSN : 1882-4749
Print ISSN : 1882-2398
ISSN-L : 1882-2398
Review
Developments of Gamma-ray Imagers using CdTe Semiconductors based on the Analog ASIC Technology
Goro SATOShin WATANABE
Author information
JOURNAL FREE ACCESS

2014 Volume 57 Issue 2 Pages 57-65

Details
Abstract
  Cadmium Telluride (CdTe) is one of the most promising semiconductor materials for hard X-ray and gamma-ray detection because of the high detection efficiency, and of the good energy resolution. Moreover, CdTe detectors with Schottky junction work as diode detectors, and show superior energy resolution. Based on the CdTe diode devices, we have developed CdTe pixel/strip imagers, and also realized a Si/CdTe Compton camera. These devices will be used for the Hard X-ray Imager (HXI) and the Soft Gamma-ray Detector (SGD) onboard ASTRO-H X-ray satellite to be launched in 2015. These developments are briefly reported in this article. We also describe our recent development of low-noise analog readout ASICs to be used for future development of CdTe gamma-ray imagers.
Content from these authors
© 2014 The Vacuum Society of Japan
Previous article Next article
feedback
Top