Abstract
pn-control techniques by impurity doping both for single and co-deposited films consisting of two kinds of organic semiconductors were established. Ionization rate of dopants in organic semiconductor films was revealed to be less than 10%. A series of fundamental junctions such as Schottky junctions, pn-homojunctions, p+, n+/metal ohmic junctions, n+p+-ohmic homojunctions, and tandem cells were successfully fabricated in the co-deposited organic semiconductor films by impurity doping only.
